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| High hFE LOW VCE (sat) Silicon NPN Epitaxial Planar Transistor sAbsolute maximum ratings (Ta=25C) Symbol 2SC3852 2SC3852A VCBO VCEO VEBO IC IB PC Tj Tstg 80 60 6 3 1 25(Tc=25C) 150 -55 to +150 100 80 Unit V V V A A W C C IEBO V(BR)CEO hFE VCE(sat) fT COB 2SC3852/3852A Application : Driver for Solenoid and Motor, Series Regulator and General Purpose (Ta=25C) 2SC3852 2SC3852A Unit sElectrical Characteristics Symbol ICBO VCB= VEB=6V IC=25mA VCE=4V, IC=0.5A IC=2A, IB=50mA VCE=12V, IE=-0.2A VCB=10V, f=1MHz 80 100max 60min 500min 0.5max 15typ 50typ Conditions External Dimensions FM20(TO220F) 4.00.2 10.10.2 4.20.2 2.8 c0.5 10max 100 80min A A V V MHz pF 2.54 2.20.2 16.90.3 V 8.40.2 13.0min 1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.40.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 20 RL () 20 IC (A) 1.0 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 15 IB2 (mA) -30 ton (s) 0.8typ tstg (s) 3.0typ tf (s) 1.2typ 3.9 BCE IC - VCE Characteristics (Typical) 3 IB 2 =1 m VCE( sat ) - I B Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t)( V ) 1.0 I C - VBE Temperature Characteristics (Typical) (V C E= 4V) 3 A 8mA Collector Current I C (A) 5mA 2 3mA 2mA 1.0 Collector Current I C( A) 2 p) em 0.2 0.80.2 a b o3.30.2 Weight : Approx 2.0g a. Type No. b. Lot No. mp) e Te (Cas Cas 0.5mA 2A I C= 1A 0 0.001 0 0 0 1 2 3 4 5 6 0.005 0.01 0.05 0.1 0.5 1 0 -30C 3A 25C 125 1mA C ( 1 0.5 1 (Case Temp eT ) 0.5 Base-Emittor Voltage V B E( V) 1.0 1.1 Collector-Emitter Voltage V C E( V) Base Current I B( A) (VCE=4V) 2000 DC Cur rent Gain h FE 2000 DC Cur rent Gain h FE (V C E= 4V) j-a(C/W) Transient Thermal Resistance hFE - IC Characteristics (Typical) h FE - I C Temperature Characteristics (Typical) j-a - t Characteristics 5 125C 25 C 1000 Typ 1000 500 500 - 3 0 C 1 V CB= 10V IE=-2A 1 10 Time t(ms) 100 1000 100 0.01 0.1 0.5 1 3 100 0.01 0.1 0.5 1 3 0.5 Collector Current I C( A) Collector Current I C( A) fT - IE Characteristics (Typical) 30 (VCE=12V) 10 Safe Operating Area (Single Pulse) 30 1m P c - T a Derating Cut-o ff F reque ncy f T( MH Z) 10 m 0m s Collect or Curr ent I C( A) s M aximum Power Dissipa ti on P C( W) 5 10 s W 20 DC 20 ith In Typ fin 1 0.5 ite he at si nk 10 10 Without Heatsink Natural Cooling 0.1 Without Heatsink 3 5 50 100 0 0 -0.005 -0.01 0.05 -0.05 -0.1 -0.5 -1 -2 10 Emitter Current I E( A) Collector-Emitter Voltage V C E( V) 0 50 100 150 Ambient Temperature Ta(C) 77 This datasheet has been downloaded from: www..com Datasheets for electronic components. |
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